Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact
Título:
Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact
ISBN:
9783319939254
Autor personal:
Edición:
1st ed. 2018.
PRODUCTION_INFO:
Cham : Springer International Publishing : Imprint: Springer, 2018.
Descripción física:
XXXIII, 438 p. 215 illus., 207 illus. in color. online resource.
Serie:
Springer Series in Materials Science, 270
Contenido:
Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.
Síntesis:
This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
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