Content -- 1. Introduction -- 1.1 The History of Silicon MOS Devices -- 1.2 Scaling Issues in ULSIs -- 1.3 Requirements on Gate Dielectrics: Depending on Applications -- 2. MIS Structure -- 2.1 Ideal MIS System -- 2.2 Real System: Si-SiO2 MOS Technology -- 2.3 Carrier Transport in Dielectric Films -- 2.4 Electrical Measurements -- (a) Film Thickness -- (b) Work Function and Fixed-Charge Density -- (c) Interface-State Density -- (a) High-Frequency Method -- (b) Transient Spectroscopy -- (c) Charge-Pumping Method -- (a) Carrier Injection -- (b) Trap Density and Capture Cross Section -- (c) Distribution of Traps -- 3. MOS Field-Effect Transistor -- 3.1 Classical MOS Transistor -- 3.2 MOSFET Parameters -- (a) n-FETs with VT Adjustment -- (b) Buried-Channel p-FETs -- (a) Velocity Saturation Along the Lateral Field -- (b) Inversion-Layer Mobility -- (c) Universal Relation for the Effective Normal Field -- 3.3 Scaling -- (a) Small-Geometry Effects -- (b) Limited Performance Under High Fields -- (c) Hot-Carrier Effects and Drain Engineering -- (d) Gate-Induced Drain Leakage -- (e) Dielectric Reliability and Gate Electrodes -- 3.4 Device Integration -- 4. Thermally Grown Silicon Oxide -- 4.1 Processing -- 4.2 Electrical and Physical Characteristics -- 4.3 Charge-Trapping Characteristics -- 4.4 Dielectric Breakdown -- (a) Intrinsic Breakdown -- (b) Extrinsic Breakdown -- (c) Thickness Dependence -- (a) Electrode-Related Breakdown -- (b) Isolation-Related Breakdown -- (c) Oxide Integrity Degradation Near Gate Edges -- (d) Nonvolatile Memories -- 4.5 Hot-Carrier-Induced Degradation -- 4.6 Other Silicon Oxides -- 4.7 Summary and Future Trends -- 5. Thermally Nitrided Oxides: for Flash Memories -- 5.1 Processing and Material Properties -- (a) Processing Issues -- (b) Rapid Thermal Processing -- (c) Nitridation of SiO2 -- 5.2 Electrical Characteristics and Performance -- (a) Electron Mobility -- (b) Hole Mobility -- (c) Discussion on the.Mobility Modulation -- 5.3 Dielectric Reliability -- (a) Dependence on the Fabrication Condition -- (b) A Model for Electron Trapping -- (c) A Model for Interface-State Generation -- (a) Charge-to-Breakdown -- (b) Extrinsic Breakdown -- (a) Nonvolatile Memories -- (b) CMOSFETs with Advanced Gates -- 5.4 Issues Inherent to Scaled MOSFETs -- (a) Substrate and Gate Current -- (b) Hot-Carrier-Induced Degradation -- (c) Device Lifetime -- 5.5 Summary and Outlook -- 6. High-Dielectric Constant Films: for Passive Capacitance -- 6.1 Silicon Nitride (Si3N4) -- 6.2 Tantalum Oxide (Ta2O5 -- 6.3 Ferroelectrics -- (a) Ferroelectric Properties -- (b) Issues Common to ULSI Applications -- References.