Epitaxial Growth of III-Nitride Compounds Computational Approach
Titre:
Epitaxial Growth of III-Nitride Compounds Computational Approach
ISBN (Numéro international normalisé des livres):
9783319766416
Edition:
1st ed. 2018.
PRODUCTION_INFO:
Cham : Springer International Publishing : Imprint: Springer, 2018.
Description physique:
IX, 223 p. 136 illus., 101 illus. in color. online resource.
Collections:
Springer Series in Materials Science, 269
Table des matières:
Introduction -- Computational Methods -- Fundamental Properties of III-Nitrides -- Growth Processes -- Novel Behaviour of Thin Films -- Summary.
Extrait:
This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.
Auteur collectif ajouté:
Langue:
Anglais