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Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact
Titre:
Metal Impurities in Silicon- and Germanium-Based Technologies Origin, Characterization, Control, and Device Impact
ISBN (Numéro international normalisé des livres):
9783319939254
Auteur personnel:
Edition:
1st ed. 2018.
PRODUCTION_INFO:
Cham : Springer International Publishing : Imprint: Springer, 2018.
Description physique:
XXXIII, 438 p. 215 illus., 207 illus. in color. online resource.
Collections:
Springer Series in Materials Science, 270
Table des matières:
Preface -- Introduction -- Basic Properties of Metals in Semiconductors -- Sources of Metals in Si and Ge Processing -- Characterization and Detection of Metals in Silicon and Germanium -- Electrical Activity of Metals in Si and Ge -- Impact of Metals on Silicon Devices and Circuits -- Gettering and Passivation of Metals in Silicon and Germanium -- Modeling and Simulation of Metals in Silicon and Germanium -- Conclusions.
Extrait:
This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
Auteur ajouté:
Auteur collectif ajouté:
Langue:
Anglais