Strain Effect in Semiconductors Theory and Device Applications
Titre:
Strain Effect in Semiconductors Theory and Device Applications
ISBN (Numéro international normalisé des livres):
9781441905529
Auteur personnel:
Edition:
1st ed. 2010.
PRODUCTION_INFO:
New York, NY : Springer US : Imprint: Springer, 2010.
Description physique:
XII, 350 p. online resource.
Table des matières:
Overview: The Age of Strained Devices -- Band Structures of Strained Semiconductors -- Stress, Strain, Piezoresistivity, and Piezoelectricity -- Strain and Semiconductor Crystal Symmetry -- Band Structures of Strained Semiconductors -- Low-Dimensional Semiconductor Structures -- Transport Theory of Strained Semiconductors -- Semiconductor Transport -- Strain in Semiconductor Devices -- Strain in Electron Devices -- Piezoresistive Strain Sensors -- Strain Effects on Optoelectronic Devices.
Extrait:
Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities. .
Auteur collectif ajouté:
Accès électronique:
Full Text Available From Springer Nature Engineering 2010 Packages
Langue:
Anglais