Semiconductors, Part II -- Device Modeling -- On the Child-Langmuir law for semiconductors -- A critical review of the fundamental semiconductor equations -- Physics for device simulations and its verification by measurements -- An industrial perspective on semiconductor technology modeling -- Combined device-circuit simulation for advanced semiconductor devices -- Methods of the kinetic theory of gases relevant to the kinetic models for semiconductors -- Shock waves in the hydrodynamic model for semiconductor devices -- Macroscopic and microscopic approach for the simulation of short devices -- Derivation of the high field semiconductor equations -- Energy models for one-carrier transport in semiconductor devices -- Some applications of asymptotic methods in semiconductor device modeling -- Discretization of three dimensional drift-diffusion equations by numerically stable finite elements -- Mathematical modeling of quantum wires in periodic heterojunction structures -- Numerical simulation of MOS transistors -- Scattering theory of high frequency quantum transport -- Accelerating dynamic iteration methods with application to semiconductor device simulation -- Boundary value problems in semiconductors for the stationary Vlasov-Maxwell-Boltzmann equations -- On the treatment of the collision operator for hydrodynamic models -- Adaptive methods for the solution of the Wigner-Poisson system -- The derivation of analytic device models by asymptotic methods -- Symmetric forms of energy - momentum transport models -- Analysis of the Gunn effect -- Some examples of singular perturbation problems in Device Modeling.