Nanoscaled SOI Material and Device Technologies -- Status and trends in SOI nanodevices -- Non-Planar Devices for Nanoscale CMOS -- High-? Dielectric Stacks for Nanoscaled SOI Devices -- Nanoscaled Semiconductor Heterostructures for CMOS Transistors Formed by Ion Implantation and Hydrogen Transfer -- Fluorine -Vacancy Engineering: A Viable Solution for Dopant Diffusion Suppression in SOI Substrates -- Suspended Silicon-On-Insulator Nanowires for the Fabrication of Quadruple Gate MOSFETs -- Physics of Novel Nanoscaled SemOI Devices -- Integration of silicon Single-Electron Transistors Operating at Room Temperature -- SiGe Nanodots in Electro-Optical SOI Devices -- Nanowire Quantum Effects in Trigate SOI MOSFETs -- Semiconductor Nanostructures and Devices -- MuGFET CMOS Process with Midgap Gate Material -- Doping Fluctuation Effects in Multiple-Gate SOI MOSFETs -- SiGeC HBTs: impact of C on Device Performance -- Reliability and Characterization of Nanoscaled SOI Devices -- Noise Research of Nanoscaled SOI Devices -- Electrical Characterization and Special Properties of FINFET Structures -- Substrate Effect on the Output Conductance Frequency Response of SOI MOSFETs -- Investigation of Compressive Strain Effects Induced by STI and ESL -- Charge Trapping Phenomena in Single Electron NVM SOI Devices Fabricated by a Self-Aligned Quantum DOT Technology -- Theory and Modeling of Nanoscaled Devices -- Variability in Nanoscale UTB SOI Devices and its Impact on Circuits and Systems -- Electron Transport in Silicon-on-Insulator Nanodevices -- All Quantum Simulation of Ultrathin SOI MOSFETs -- Resonant Tunneling Devices on SOI Basis -- Mobility Modeling in SOI FETs for Different Substrate Orientations and Strain Conditions -- Three-Dimensional (3-D) Analytical Modeling of the Threshold Voltage, DIBL and Subthreshold Swing of Cylindrical Gate all Around Mosfets.